Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films

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作者：
20154601554291
机构：
[1] Sofin, R.G.S.
[2] Wu, Han-Chun
[3] Ramos, R.
[4] Arora, S.K.
[5] Shvets, I.V.
来源：
Sofin, R.G.S. (sofins@squ.edu.om) | 1600年 / American Institute of Physics Inc.卷 / 118期
关键词：
Molecular beam epitaxy - Anisotropy - Magnesia - Molecular oxygen;
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