Synthesis and piezoelectric properties of freestanding ferroelectric films based on barium strontium titanate

被引:0
|
作者
Afanasiev M.S. [1 ]
Kiselev D.A. [1 ,2 ]
Sivov A.A. [1 ]
Chucheva G.V. [1 ]
机构
[1] Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences (Fryazino Branch), 1 Vvedenskogo Sq, Moscow Region, Fryazino
[2] National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, Moscow
来源
Mod. Electron. Mater. | 2023年 / 4卷 / 163-168期
基金
俄罗斯科学基金会;
关键词
ferroelectric domain structure; ferroelectric membrane; hysteresis; piezoelectric properties; structure;
D O I
10.3897/j.moem.9.4.115181
中图分类号
学科分类号
摘要
In this work, the membrane structures based on lead-free ferroelectric barium strontium titanate with composition Ba0.8 Sr0.2 TO3 (BSTO) were fabricated by a magnetron sputtering method. The formation of a single-phase Ba0.8 Sr0.2 TO3 with thickness of 300 nm sintered on Si substrate is confirmed by XRD analysis. It is shown that films without a silicon substrate exhibit ferroelectric and piezoelectric properties. The piezoelectric and ferroelectric be-haviors of BSTO thin film without a silicon substrate were confirmed through a piezoelectric force microscopy and Kelvin probe force microscopy and measurements of the effective piezoelectric coefficients (d33 and d15). Images of the residual potential of polarized areas have been obtained on the membranes, which are stable over time despite the absence of a lower electrode. Additionally, a local of ferroelectric hysteresis loop has been observed. A combination of the structural and piezoelectric measurements reveals that it possible to create freestanding ferroelectric films based on Ba0.8 Sr0.2 TO3 system, establishing it as a promising candidate for high-performance electromechanical applications. © 2023 National University of Science and Technology MISIS.
引用
收藏
页码:163 / 168
页数:5
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