Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 μm

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作者：
机构：
[1] Caroff, P.
[2] Bertru, N.
[3] Le Corre, A.
[4] Dehaese, O.
[5] Rohel, T.
[6] Alghoraibi, I.
[7] Folliot, H.
[8] Loualiche, S.
来源：
Caroff, P. | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词：
Atomic force microscopy - Molecular beam epitaxy - Nanostructured materials - Photoluminescence - Sampling - Semiconducting indium phosphide - Telecommunication systems;
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摘要：
The As flux effect on InAs quantum dots formed by gas source molecular beam epitaxy on InP substrates, oriented following the (311)B crystallographic direction has been studied. Atomic force microscopy images show that the quantum dot (QD) density dramatically increases and quantum dot sizes decrease, when decreasing the As pressure. Moreover, the size dispersion is narrowed. Photoluminescence measurements on the high QD density samples is shifted to higher energy, toward the telecommunication important 1.55 μm emission. ©2005 The Japan Society of Applied Physics.
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页码：33 / 36
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