Photoluminescence of amorphous Si films prepared by atmospheric pressure chemical vapor deposition

被引：0

作者：

Liu, Yong ^{[1
]}

Xiao, Ying ^{[1
]}

Wo, Yinhua ^{[1
]}

Song, Chenlu ^{[1
]}

Han, Gaorong ^{[1
]}

机构：

[1] Lab. for Silicon Mat., Mat. Sci. and Eng. Dept., Zhejiang Univ., Hangzhou 310027, China

来源：

Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology | 2004年 / 24卷 / 06期

关键词：

Amorphous silicon - Chemical vapor deposition - Photoluminescence - Raman spectroscopy - Thin films - X ray photoelectron spectroscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Amorphous Si films were grown by atmospheric pressure chemical vapor deposition (APCVD). Its microstructures and optical properties were characterized with photo-luminescence (PL) spectroscopy, Raman and X-ray photoelectron spectroscopy (XPS). A green luminescence peak at 523 nm was observed. Raman and XPS spectra show that the films display Si-rich and O-rich phases. We suggest that the phase interfaces result in the luminescence. Data fitting of Raman spectra indicates that Si nano-crystalline grains are embedded in the films.

引用

页码：469 / 471

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