Silicon-germanium epilayers: Physical fundamentals of growing strained and fully relaxed heterostructures

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作者：
Bolkhovityanov, Yu.B. [1 ]
Pchelyakov, O.P. [1 ]
Chikichev, S.I. [1 ]
机构：
[1] Institute of Semiconductor Physics, Siberian Div. Russ. Acad. of Sci., pros. Lavrent'eva 13, 630090 Novosibirsk, Russia
来源：
Uspekhi Fizicheskikh Nauk | 2001年 / 171卷 / 07期
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页码：714 / 715
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