High Fτ and Fmax InAlAs/InGaAs transferred-substrate HBTs

被引：0
|
作者：
Betser, Yoram [1 ]
Mensa, Dino [1 ]
Jaganathan, Shri [1 ]
Mathew, Thomas [1 ]
Rodwell, Mark J. [1 ]
机构：
[1] Univ of California Santa Barbara, United States
来源：
Annual Device Research Conference Digest | 2000年
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
2
引用
下载
收藏
页码：141 / 142
相关论文
共 50 条
  • [41] Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies
    Kaule, Evelyne
    Doerner, Ralf
    Weimann, Nils
    Rudolph, Matthias
    PROCEEDINGS OF THE 2020 GERMAN MICROWAVE CONFERENCE (GEMIC), 2020, : 52 - 55
  • [42] Broadband feedback amplifiers with AlInAs/GaInAs transferred-substrate HBT
    Agarwal, B
    Lee, Q
    Mensa, D
    Pullela, R
    Guthrie, J
    Rodwell, MJW
    ELECTRONICS LETTERS, 1998, 34 (13) : 1357 - 1358
  • [43] 170GHz transferred-substrate heterojunction bipolar transistor
    Bhattacharya, U
    Samoska, L
    Pullela, R
    Guthrie, J
    Lee, Q
    Agarwal, B
    Mensa, D
    Rodwell, MJW
    ELECTRONICS LETTERS, 1996, 32 (15) : 1405 - 1406
  • [44] 75 GHz ECL static frequency divider using InAlAs/InGaAs HBTs
    Mathew, T
    Kim, HJ
    Scott, D
    Jaganathan, S
    Krishnan, S
    Wei, Y
    Urteaga, M
    Long, S
    Rodwell, MJW
    ELECTRONICS LETTERS, 2001, 37 (11) : 667 - 668
  • [45] AN INTEGRATED LASER DRIVER CIRCUIT BASED ON IMPLANTED COLLECTOR INGAAS/INALAS HBTS
    SU, LM
    KUNZEL, H
    BACH, HG
    SCHLAAK, W
    GROTE, N
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 573 - 578
  • [46] A G-Band High Power Frequency Doubler in Transferred-Substrate InP HBT Technology
    Hossain, M.
    Nosaeva, K.
    Janke, B.
    Weimann, N.
    Krozer, V.
    Heinrich, W.
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2016, 26 (01) : 49 - 51
  • [47] STRESS CURRENT BEHAVIOR OF INALAS/INGAAS AND ALGAAS/GAAS HBTS WITH POLYIMIDE PASSIVATION
    TANAKA, S
    KASAHARA, K
    SHIMAWAKI, H
    HONJO, K
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (11) : 560 - 562
  • [48] HIGH-FMAX ALGAAS/INGAAS AND ALGAAS/GAAS HBTS FABRICATED WITH MOMBE SELECTIVE GROWTH IN EXTRINSIC BASE REGIONS
    SHIMAWAKI, H
    AMAMIYA, Y
    FURUHATA, N
    HONJO, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2124 - 2124
  • [49] 66 GHz static frequency divider in transferred-substrate HBT technology
    Lee, Q
    Mensa, D
    Guthrie, J
    Jaganathan, S
    Mathew, T
    Betser, Y
    Krishnan, S
    Ceran, S
    Rodwell, MJW
    1999 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM - DIGEST OF PAPERS, 1999, : 87 - 90
  • [50] Modeling of InP DHBTs in a Transferred-Substrate Technology with Diamond Heat Spreader
    Johansen, T. K.
    Hossain, M.
    Doerner, R.
    Yacoub, H.
    Nosaeva, K.
    Shivan, T.
    Heinrich, W.
    Krozer, V
    2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2021, : 169 - 172
12345