Photoelectrochemical behavior of AlxIn1−xN thin films grown by plasma-assisted dual source reactive evaporation

被引:0
|
作者
机构
[1] Alizadeh, M.
[2] Ganesh, V.
[3] Pandikumar, A.
[4] Goh, B.T.
[5] Azianty, S.
[6] Huang, N.M.
[7] Rahman, S.A.
来源
Alizadeh, M. (alizadeh_kozerash@yahoo.com) | 1600年 / Elsevier Ltd卷 / 670期
关键词
Photoelectrochemical cells;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
    Goldenberg, Eda
    Ozgit-Akgun, Cagla
    Biyikli, Necmi
    Okyay, Ali Kemal
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (03):
  • [42] Electron spin resonance of Zn1-xMgxO thin films grown by plasma-assisted molecular beam epitaxy
    Wassner, T. A.
    Laumer, B.
    Althammer, M.
    Goennenwein, S. T. B.
    Stutzmann, M.
    Eickhoff, M.
    Brandt, M. S.
    APPLIED PHYSICS LETTERS, 2010, 97 (09)
  • [43] On the growth of Zn1-xMnxO thin films by plasma-assisted MBE
    Deparis, Christiane
    Morhain, Christian
    Zuniga-Perez, Jesus
    Chauveau, Jean-Michel
    Kim-Chauveau, Hyonju
    Vennegues, Philippe
    Teisseire, Monique
    Vinter, Borge
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 10, 2013, 10 (10): : 1322 - 1324
  • [44] GaN quantum dots grown on AlxGa1-xN layer by plasma-assisted molecular beam epitaxy
    Hori, Y.
    Oda, O.
    Bellet-Amalric, E.
    Daudin, B.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (02)
  • [45] Impedometric anion sensing behaviour of InxGa1-xN films grown by modified activated reactive evaporation
    Meher, S. R.
    Biju, Kuyyadi P.
    Jain, Mahaveer K.
    APPLIED SURFACE SCIENCE, 2011, 258 (05) : 1744 - 1749
  • [46] Optical characterization by variable angle spectroscopic ellipsometry of nitrogen-doped MgxZn1-xO thin films prepared by the plasma-assisted reactive evaporation method
    Abe, Takami
    Nakagawa, Akira
    Nakagawa, Michiko
    Chiba, Tetsuya
    Takahashi, Shuzo
    Kashiwaba, Yasuhiro
    Chiba, Shigeki
    Ojima, Tsutomu
    Aota, Katsumi
    Daibo, Masahiro
    Osada, Hiroshi
    Fujiwara, Tamiya
    Niikura, Ikuo
    Kashiwaba, Yasube
    Tsutsumi, Kouichi
    Suzuki, Michio
    THIN SOLID FILMS, 2014, 571 : 615 - 619
  • [47] Structural Characterization of Bismuth Zinc Oxide Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy
    Seok, Lim Dong
    Shin, Eun-Jung
    Lim, Se Hwan
    Han, Seok Kyu
    Lee, Hyosung
    Hong, Soon-Ku
    Joeng, Myoungho
    Lee, Jeong Yong
    Cho, Hyung Koun
    Yao, Takafumi
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2011, 21 (10): : 563 - 567
  • [48] Magnetic properties of β-MnO2 thin films grown by plasma-assisted molecular beam epitaxy
    Xing, X. J.
    Yu, Y. P.
    Xu, L. M.
    Wu, S. X.
    Li, S. W.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (39): : 15526 - 15531
  • [49] Effect of Growth Temperature and Mn Incorporation on GaN:Mn Thin Films Grown by Plasma-Assisted MOCVD
    Mulyanti, Budi
    Subagio, A.
    Arsyad, F. S.
    Arifin, P.
    Barmawi, M.
    Irzaman
    Jamal, Z.
    Hashim, U.
    JOURNAL OF MATHEMATICAL AND FUNDAMENTAL SCIENCES, 2008, 40 (02) : 97 - 108
  • [50] Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy
    Jung, YS
    Choi, WK
    Kononenko, OV
    Panin, GN
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)