Short-channel AlGaN/GaN field-plated high-electron-mobility transistors for X-band high power operation

被引：0
|
作者：
Lee, Jong-Wook [1 ]
Kuliev, Almaz S. [2 ]
Adesida, Ilesanmi [2 ]
机构：
[1] School of Electronics and Information, Kyung Hee University, Suwon 446-701, Korea, Republic of
[2] Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, United States
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 3 PART 1期
关键词：
High electron mobility transistors;
D O I：
暂无
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学科分类号：
摘要：
Journal article (JA)
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页码：1479 / 1483
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