Polarization engineering in AlGaN/GaN heterostructure

被引：0
|
作者：
Xue, Fangshi [1 ]
机构：
[1] National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing 210016, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2008年 / 28卷 / 03期
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学科分类号：
摘要：
Aluminum gallium nitride
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页码：334 / 339
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