Polarization engineering in AlGaN/GaN heterostructure

被引：0
|
作者：
Xue, Fangshi [1 ]
机构：
[1] National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing 210016, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2008年 / 28卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Aluminum gallium nitride
引用
收藏
页码：334 / 339
相关论文
共 50 条
  • [1] Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure
    He, Xiaoguang
    Zhao, Degang
    Liu, Wei
    Yang, Jing
    Li, Xiaojing
    Li, Xiang
    Journal of Alloys and Compounds, 2016, 670 : 258 - 261
  • [2] Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure
    He, Xiaoguang
    Zhao, Degang
    Liu, Wei
    Yang, Jing
    Li, Xiaojing
    Li, Xiang
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 670 : 258 - 261
  • [3] Polarization and interface charge coupling in ferroelectric/AlGaN/GaN heterostructure
    Zhang, Min
    Kong, Yuechan
    Zhou, Jianjun
    Xue, Fangshi
    Li, Liang
    Jiang, Wenhai
    Hao, Lanzhong
    Luo, Wenbo
    Zeng, Huizhong
    APPLIED PHYSICS LETTERS, 2012, 100 (11)
  • [4] Polarization effects and energy band diagram in AlGaN/GaN heterostructure
    Osvald, J.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 87 (04): : 679 - 682
  • [5] Observation of Polarization Pinning Effect in PZT/AlGaN/GaN Heterostructure
    Kong, Yuechan
    Zhou, Jianjun
    Chen, Tangsheng
    Luo, Wenbo
    Hao, Lanzhong
    Zeng, Huizhong
    2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
  • [6] Polarization effects and energy band diagram in AlGaN/GaN heterostructure
    J. Osvald
    Applied Physics A, 2007, 87 : 679 - 682
  • [7] Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors
    Guo, Jiarui
    Gu, Yan
    Liu, Yushen
    Liang, Fangzhou
    Chen, Wei
    Xie, Feng
    Yang, Xifeng
    Qian, Weiying
    Zhang, Xiangyang
    Chen, Guoqing
    Yang, Guofeng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (05) : 2352 - 2357
  • [8] Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance
    Wang, Dong-Po
    Wu, Chi-Chang
    Wu, Chia-Chun
    APPLIED PHYSICS LETTERS, 2006, 89 (16)
  • [9] Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
    Heikman, S
    Keller, S
    Wu, Y
    Speck, JS
    DenBaars, SP
    Mishra, UK
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (12) : 10114 - 10118
  • [10] Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
    Helkman, S. (sten@ece.ucsb.edu), 1600, American Institute of Physics Inc. (93):
12345