Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

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作者：
Coelho, S.M.M. [1 ]
Auret, F.D. [1 ]
Janse Van Rensburg, P.J. [1 ]
Nel, J.M. [1 ]
机构：
[1] Coelho, S.M.M.
[2] Auret, F.D.
[3] Janse Van Rensburg, P.J.
[4] Nel, J.M.
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| 1600年 / American Institute of Physics Inc.卷 / 114期
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