Study of the mechanism of laser-induced damage on semiconductor

被引：0
|
作者：
Feng, Jin-Jing [1 ]
Yan, Ji-Xiang [1 ]
机构：
[1] School of Information Science and Technology, Beijing Institute of Technology, Beijing 100081, China
来源：
Guangxue Jishu/Optical Technique | 2007年 / 33卷 / 05期
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摘要：
The absorption mechanism of semiconductor is studied. The heat transferring process and free carrier transferring process in semiconductor during laser pulse are described by researching the one dimension heat conduction equation and carrier transferring equation. Different laser-induced damage mechanisms in semiconductor are analyzed. The transient temperature field in PbS during the irradiation by 1.06 μm laser pulse which is generated by Nd:YAG laser is simulated.
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页码：643 / 644
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