Study of the laser-induced damage in DKDP crystal

被引:1
|
作者
Liu, Baoan [1 ]
Ji, Lailin [2 ]
Hu, Guohang [3 ]
Zhao, Yuanan [3 ]
Xu, Mingxia [1 ]
Ji, Shaohua [1 ]
Zhu, Lili [1 ]
Zhang, Lisong [1 ]
Wang, Zhengping [1 ]
Sun, Xun [1 ]
Xu, Xinguang [1 ]
机构
[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] CAEP, Shanghai Inst Laser Plasmas, Shanghai 201800, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
关键词
DKDP crystal; third harmonic generation; laser-induced damage; laser annealing; DIHYDROGEN PHOSPHATE CRYSTALS; RAPID-GROWTH; IRRADIATION; KH2PO4;
D O I
10.1117/12.910489
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The crucial problem of DKDP crystal for third harmonic generation (THG) is its low laser-induced damage threshold with respect to KDP, which greatly limits energy fluence of the output laser and crystals' useful life. In order to study the relation between wavelength and laser-induced damage of DKDP, we carried out some related experiments in present work. DKDP crystal was conventionally grown from 80%-deuterated solution of high pure materials and the crystal was cut to tripler sample of type II. Laser-induced damage threshold of DKDP crystal for THG was measured under different wavelengths and the effect of laser annealing was also investigated. The experiment shows that laser annealing could obviously improve laser-induced damage threshold of DKDP crystal. The threshold is improved to 1.4, 1.9 or 2.7 times that before annealing for fundamental, second or third harmonic, respectively. Thus laser annealing is an effective approach to enhance laser-induced damage resistance of DKDP crystal.
引用
收藏
页数:6
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