Light Sensing of a-Si:H p-i-n DiodeMechanism of Asymmetric Charge Carrier Transfer

被引：0
|
作者：
Kim K. [1 ]
Kuo Y. [1 ]
机构：
[1] Thin Film Nano and Microelectronics Research Laboratory, Texas AandM University, College Station, 77843, TX
来源：
Kuo, Yue (yuekuo@tamu.edu) | 1600年 / Institute of Electrical and Electronics Engineers Inc.卷 / 01期
关键词：
and asymmetric carrier loss; defect density; Electromagnetic Wave Sensors a-Si:H pin diode; i-layer thickness;
D O I：
10.1109/LSENS.2017.2682701
中图分类号：
学科分类号：
摘要：
The mechanism of asymmetric carrier transfers on the light sensing of the a-Si:H p-i-n diode has been explored using devices of different i-layer thicknesses illuminated with lights of three different wavelengths, as well as the electric-optical stress method. The location of the photo-generated electron-hole pairs within the I-layer varies with the wavelength of the illuminated light, which contributes to the asymmetric transfer and loss of the carriers. Therefore, the performance of the a-Si:H p-i-n photodiode is a complicated function of the wavelength and defects in the structure. © 2017 IEEE.
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