Highly Conductive Paths in Diamond and their Application in High Pressure Measurements

Diamonds possess exceptional properties such as high mechanical strength, thermal conductivity, and electrical resistance, making them suitable for various applications, including high-power electronics and optoelectronics. However, fabricating conductive structures in diamond remains a significant technological challenge. In this publication, we present a controlled process for fabricating precise amorphous conductive paths in a monocrystalline diamond using a focused ion beam (FIB) technique. The resistivity and thickness of the fabricated structures were determined, and their morphology was carefully characterized. The results showed that the optimal charge dose for achieving the lowest resistance was found to be 10(17) ions/cm(2). The fabricated structures exhibited amorphous morphology. Elemental analysis confirmed the presence of gallium ions in the modified material. The resistivity of the conductive paths was determined to be 30 mu Omega m, which is remarkably low compared to previous studies and only 1-2 orders of magnitude higher than in metals. Additionally, it is shown that this technology has potential applications in high-pressure chambers and the development of high-pressure sensors within diamond anvils. Overall, this study provides valuable insights into fabricating conductive structures on diamonds using FIB and opens up possibilities for diamond electronics.