Photoinduced effects on single-charge tunneling in a Si two-dimensional multidot field-effect transistor

被引:0
|
作者
Ikeda, Hiroya [1 ]
Nuryadi, Ratno [1 ]
Ishikawa, Yasuhiko [1 ]
Tabe, Michiharu [1 ]
机构
[1] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
来源
| 1600年 / Japan Society of Applied Physics卷 / 43期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Two-Dimensional Pnictogen for Field-Effect Transistors
    Zhou, Wenhan
    Chen, Jiayi
    Bai, Pengxiang
    Guo, Shiying
    Zhang, Shengli
    Song, Xiufeng
    Tao, Li
    Zeng, Haibo
    RESEARCH, 2019, 2019
  • [32] Two-dimensional clusters in SiGe/Si heterostructures and their effect on field effect transistor transport characteristics
    Girginoudi, D
    Thanailakis, A
    Georgoulas, N
    Kasabyan, V
    Christou, A
    SUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (02) : 407 - 411
  • [33] Two-dimensional clusters in SiGe/Si heterostructures and their effect on field effect transistor transport characteristics
    Demoncritus Univ of Thrace, Xanthi, Greece
    Superlattices Microstruct, 2 (407-411):
  • [34] Two-dimensional carrier profiling on operating Si metal-oxide semiconductor field-effect transistor by scanning capacitance microscopy
    Kimura, K
    Kobayashi, K
    Yamada, H
    Matsushige, K
    Usuda, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1371 - 1376
  • [37] Plasma oscillations of the two-dimensional electron gas in the field-effect transistor with a cylindrical gate electrode
    A. V. Arsenin
    A. D. Gladun
    V. G. Leiman
    V. L. Semenenko
    V. I. Ryzhii
    Journal of Communications Technology and Electronics, 2010, 55 : 1285 - 1294
  • [38] OBSERVATION OF SUBBANDS IN THE GAALAS ON TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR STRUCTURES
    SMOLINER, J
    HAUSER, M
    GORNIK, E
    APPLIED PHYSICS LETTERS, 1988, 52 (01) : 33 - 35
  • [39] Plasma oscillations of the two-dimensional electron gas in the field-effect transistor with a cylindrical gate electrode
    Arsenin, A. V.
    Gladun, A. D.
    Leiman, V. G.
    Semenenko, V. L.
    Ryzhii, V. I.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2010, 55 (11) : 1285 - 1294
  • [40] Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors
    Ahmed, Sohail
    Yi, Jiabao
    NANO-MICRO LETTERS, 2017, 9 (04) : 1 - 23