Photoinduced effects on single-charge tunneling in a Si two-dimensional multidot field-effect transistor

被引：0
|
作者：
Ikeda, Hiroya [1 ]
Nuryadi, Ratno [1 ]
Ishikawa, Yasuhiko [1 ]
Tabe, Michiharu [1 ]
机构：
[1] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
来源：
| 1600年 / Japan Society of Applied Physics卷 / 43期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Photoinduced effects on single-charge tunneling in a Si two-dimensional multidot field-effect transistor
    Ikeda, H
    Nuryadi, R
    Ishikawa, Y
    Tabe, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B): : L759 - L761
  • [2] Si multidot single-charge tunneling devices
    Tabe, M
    Nuryadi, R
    Ikeda, H
    Ishikawa, Y
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 630 - 633
  • [3] Two-dimensional simulation of polymer field-effect transistor
    Tessler, N
    Roichman, Y
    APPLIED PHYSICS LETTERS, 2001, 79 (18) : 2987 - 2989
  • [4] SUBBANDS AND CHARGE CONTROL IN A TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR
    VINTER, B
    APPLIED PHYSICS LETTERS, 1984, 44 (03) : 307 - 309
  • [5] Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor
    Li, Mingda
    Esseni, David
    Snider, Gregory
    Jena, Debdeep
    Xing, Huili Grace
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (07)
  • [6] Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor
    李妤晨
    张鹤鸣
    张玉明
    胡辉勇
    王斌
    娄永乐
    周春宇
    Chinese Physics B, 2013, 22 (03) : 532 - 537
  • [7] Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor
    Li Yu-Chen
    Zhang He-Ming
    Zhang Yu-Ming
    Hu Hui-Yong
    Wang Bin
    Lou Yong-Le
    Zhou Chun-Yu
    CHINESE PHYSICS B, 2013, 22 (03)
  • [8] Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization
    Dai, Changhao
    Liu, Yunqi
    Wei, Dacheng
    CHEMICAL REVIEWS, 2022, 122 (11) : 10319 - 10392
  • [9] Two-dimensional modeling the static parameters for a submicron field-effect transistor
    Zaabat, M.
    Draid, M.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2009, 12 (04) : 417 - 420
  • [10] Field-effect transistor biosensors with two-dimensional black phosphorus nanosheets
    Chen, Yantao
    Ren, Ren
    Pu, Haihui
    Chang, Jingbo
    Mao, Shun
    Chen, Junhong
    BIOSENSORS & BIOELECTRONICS, 2017, 89 : 505 - 510
12345