Micro-Raman characterization of 4H-SiC stacking faults

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20141217488076
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(1) IMM-CNR, Z.I. VIII Strada, 5, 95121, Catania, Italy | 1600年 / Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited卷 / Trans Tech Publications Ltd期
关键词：
Micro-Raman characterization has been used as alternative technique to the photoluminescence in order to detect and study 4H-SiC stacking faults. The alteration of the crystalline stacking sequence perturbs the phonon-plasmon coupling which acts between the crystalline phonon modes and the electronic plasma; due to the doping element (N). The shape and the symmetry of the Longitudinal optical Raman mode is strongly correlated to the doping level of the material thus; through the monitoring of the Raman mode; the spatial morphology of the defect can be completely recovered and compared to the results provided by photoluminescence technique. The results show that such a technique allows a very fast inspection on large wafer; because it is totally independent of the stacking fault photoluminescence signals; which cover a large energy range; up to 0.7 eV. © (2014) Trans Tech Publications; Switzerland;
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103223
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页码：778 / 780
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