Influence of inserted ZnO layer on anisotropic magnetoresistance of ultra-thin permalloy films

被引：0
|
作者：
机构：
[1] Wang, Cuntao
[2] Wang, Shuyun
[3] Gao, Yuanmei
[4] Zhang, Hui
来源：
Wang, S. (wangshuyun65@163.com) | 1600年 / Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China卷 / 33期
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
10.3969/j.issn.1672-7126.2013.11.14
中图分类号：
学科分类号：
摘要：
Substrates - Binary alloys - II-VI semiconductors - Zinc oxide - Magnetoresistance - Electron transport properties - Anisotropy - Nickel alloys - Iron alloys - Ultrathin films
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