Fabrication and properties of MFIS FET for NDRO ferroelectric memory application

被引：0
|
作者：
Yan, Lei [1 ]
Lin, Yinyin [1 ]
Tang, Ting'ao [1 ]
Huang, Weining [1 ]
Jiang, Guobao [1 ]
机构：
[1] Inst. of Microelectron., Fudan Univ., Shanghai 200433, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 03期
关键词：
D O I：
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学科分类号：
摘要：
Field effect transistors
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页码：301 / 304
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