Fabrication and properties of MFIS FET for NDRO ferroelectric memory application

被引：0
|
作者：
Yan, Lei [1 ]
Lin, Yinyin [1 ]
Tang, Ting'ao [1 ]
Huang, Weining [1 ]
Jiang, Guobao [1 ]
机构：
[1] Inst. of Microelectron., Fudan Univ., Shanghai 200433, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Field effect transistors
引用
收藏
页码：301 / 304
相关论文
共 50 条
  • [1] BLT/STA/Si structure for MFIS in an NDRO-Type ferroelectric random access memory
    Jeon, Ho-Seung
    Park, Kwang-Hun
    Park, Byung-Eun
    Kim, Chul-Ju
    Choi, Yun-Soo
    FERROELECTRICS, 2007, 353 : 676 - 682
  • [2] Modeling of MFIS-FETs for the Application of Ferroelectric Random Access Memory
    Sun, Jing
    Zheng, Xuejun
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (10) : 3559 - 3565
  • [3] Fabrication of Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode
    Trinh, Bui Nguyen Quoc
    Horita, Susumu
    2006 15TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, 2007, : 86 - 89
  • [4] SBT-based ferroelectric FET for nonvolatile non-destructive read out (NDRO) memory applications
    Lim, M
    Bacon, JW
    McMillan, LD
    De Araujo, CAP
    INTEGRATED FERROELECTRICS, 1999, 27 (1-4) : 1115 - 1124
  • [5] PROCESS INTEGRATION OF THE FERROELECTRIC MEMORY FETS (FEMFETS) FOR NDRO FERRAM
    LAMPE, DR
    ADAMS, DA
    AUSTIN, M
    POLINSKY, M
    DZIMIANSKI, J
    SINHAROY, S
    BUHAY, H
    BRABANT, P
    LIU, YM
    FERROELECTRICS, 1992, 133 (1-4) : 61 - 72
  • [6] SrBi2Ta2O9/insulator/Si structure for metal/ferroelectric/insulators/Si (MFIS) in an NDRO-type ferroelectric random access memory
    Lee, WJ
    Yu, BG
    Lyu, JS
    Lee, JH
    Kim, BW
    Shin, CH
    Lee, HC
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S509 - S512
  • [7] Retention analysis of the memorized states of the MFIS structure for ferroelectric-gate FET memory by considering leakage current through ferroelectric and insulator layers
    Okuyama, M
    Sugiyama, H
    Nakaiso, T
    Noda, M
    INTEGRATED FERROELECTRICS, 2001, 34 (1-4) : 1477 - 1486
  • [8] Study of ferroelectric materials for ferroelectric memory FET
    Fujimori, Y
    Izumi, N
    Nakamura, T
    Kamisawa, A
    IEICE TRANSACTIONS ON ELECTRONICS, 1998, E81C (04) : 572 - 576
  • [9] Preparation of ZrO2 thin film for metal-ferroelectric-insulator-semiconductor (MFIS) FET'S application
    Lin, YY
    Huang, WN
    Tang, TA
    Jiang, GB
    FERROELECTRICS, 2001, 260 (1-4) : 347 - 352
  • [10] IGZO channel ferroelectric memory FET
    Kobayashi, Masaharu
    2020 TWENTY-SEVENTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 20): TFT TECHNOLOGIES AND FPD MATERIALS, 2020,
12345