New uncooled thermal IR detector using silicon diode

被引：0
|
作者：
Kim, Jae-Kwan [1 ]
Han, Chul-Hi [1 ]
机构：
[1] Korea Advanced Inst of Science and, Technology, Taejon, Korea, Republic of
来源：
Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS) | 2000年
关键词：
Etching - Infrared detectors - Micromachining - Semiconducting silicon - Semiconductor diodes;
D O I：
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中图分类号：
学科分类号：
摘要：
A new thermal infrared detector using temperature characteristics of a diode is proposed and developed. Micromachined isolated silicon diode for IR detection (MISIR) utilizes electrochemical etching technique to achieve the thermal isolation of the diode. Very high dependence on the junction temperature of the diode enables high responsivity of the MISIR and electrochemical etching provides effective isolation with simple and low-cost process. The fabricated MISIR exhibits the detectivity of 1.2×1010 (cm&middotHz 1/2 /W) under air ambient at room temperature.
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页码：102 / 107
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