Defect printability for 100 nm patterns in X-ray lithography

被引：0
|
作者：
Watanabe, H. [1 ]
Marumoto, K. [1 ]
Matsui, Y. [1 ]
机构：
[1] Super-fine SR Lithography Lab., Asoc. Super-Adv. Electron. Technol., NTT Telecom. Energy Lab., 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 2 A期
关键词：
D O I：
10.1143/jjap.40.457
中图分类号：
学科分类号：
摘要：
13
引用
收藏
页码：457 / 461
相关论文
共 50 条
  • [21] Studies on defect inspectability and printability using programmed-defect X-ray mask
    Watanabe, H
    Kikuchi, Y
    Marumoto, K
    Matsui, Y
    Yabe, H
    Aya, S
    Okada, I
    Takeuchi, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12B): : 7084 - 7089
  • [22] Development of X-ray stepper with high overlay accuracy for 100-nm LSI lithography
    Fukuda, M
    Morita, H
    Haga, T
    Suzuki, M
    Tsuyuzaki, H
    Shibayama, A
    Ishihara, S
    Aoyama, H
    Mitsui, S
    Taguchi, T
    Matsui, Y
    INITIATIVES OF PRECISION ENGINEERING AT THE BEGINNING OF A MILLENNIUM, 2001, : 604 - 608
  • [23] Binary mask defect printability for 130-nm ArF lithography
    Lin, SC
    Chen, JH
    Hsu, TH
    Hung, JCC
    Lin, JCH
    21ST ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 2002, 4562 : 798 - 812
  • [24] PRINTABILITY OF SUB-150 NM FEATURES IN X-RAY-LITHOGRAPHY - THEORY AND EXPERIMENTS
    HECTOR, SD
    WONG, VV
    SMITH, HI
    MCCORD, MA
    RHEE, KW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3965 - 3969
  • [25] Extendibility of x-ray lithography to <=130 nm ground rules in complex integrated circuit patterns
    Hector, S
    Chu, W
    Thompson, M
    Pol, V
    Dauksher, B
    Cummings, K
    Resnick, D
    Pendharkar, S
    Maldonado, J
    McCord, M
    Krasnoperova, A
    Liebmann, L
    Silverman, J
    Guo, J
    Khan, M
    Bollepalli, S
    Capodieci, L
    Cerrina, F
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06): : 4288 - 4293
  • [26] Extendibility of x-ray lithography to <= 130 nm ground rules in complex integrated circuit patterns
    Hector, Scott
    Chu, William
    Thompson, Matthew
    Pol, Victor
    Dauksher, Bill
    Cummings, Kevin
    Resnick, Doug
    Pendharkar, Sandeep
    Maldonado, Juan
    McCord, Mark
    Krasnoperova, Azalia
    Liebmann, Lars
    Silverman, Jerry
    Guo, Jerry
    Khan, Mumit
    et. al.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1996, 14 (06):
  • [27] X-RAY-LITHOGRAPHY, FROM 500 TO 30 NM - X-RAY NANOLITHOGRAPHY
    SMITH, HI
    SCHATTENBURG, ML
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1993, 37 (03) : 319 - 329
  • [28] Capability of 70 nm pattern replication in X-ray lithography
    Kikuchi, Y
    Matsui, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3A): : 1227 - 1235
  • [29] Extension of x-ray lithography to 50 nm with a harder spectrum
    Khan, M
    Han, G
    Bollepalli, SB
    Cerrina, F
    Maldonado, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 3426 - 3432
  • [30] Near-field x-ray lithography to 15 nm
    Bourdillon, AJ
    Williams, GP
    Vladimirsky, Y
    Boothroyd, CB
    EMERGING LITHOGRAPHIC TECHNOLOGIES VIII, 2004, 5374 : 546 - 557
12345