The effects of PbS quantum dot surface contributing to their properties

被引：0
|
作者：
Yang, Kai [1 ]
Huang, Wuhua [4 ]
Chen, Can [1 ]
Tan, Weijie [3 ]
Peng, Jie [2 ]
Tian, Junlong [1 ,2 ]
机构：
[1] Department of Electronic Science, College of Big Data and Information Engineering, Guizhou University, Guiyang,550025, China
[2] Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Hunan, Xiangtan,411105, China
[3] State Key Laboratory of Public Big Data, Guizhou University, Guiyang,550025, China
[4] Guangxi Zhuang Autonomous Region Institute of Metrology & Test, Nanning,530200, China
来源：
Chemical Engineering Journal | 2024年 / 500卷
关键词：
IV-VI semiconductors;
D O I：
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摘要：
Journal article (JA)
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