Effects of hydrogen dilution ratio on properties of hydrogenated nanocrystalline cubic silicon carbide films deposited by very high-frequency plasma-enhanced chemical vapor deposition

被引：0

作者：

Miyajima, Shinsuke ^{[1
]}

Sawamura, Makoto ^{[1
]}

Yamada, Akira ^{[2
]}

Konaga, Makoto ^{[1
]}

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

[2] Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

来源：

| 1600年 / Japan Society of Applied Physics, 1-12-3 Kudan-Kita,k Chiyoda-ku, Tokyo, 102, Japan卷 / 46期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：25 / 28

共 50 条

[1] Effects of hydrogen dilution ratio on properties of hydrogenated nanocrystalline cubic silicon carbide films deposited by very high-frequency plasma-enhanced chemical vapor deposition
Miyajima, Shinsuke
Sawamura, Makoto
Yamada, Akira
Konagai, Makoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (25-28): : L693 - L695
[2] Effect of plasma power on structure of hydrogenated nanocrystalline cubic silicon carbide films deposited by very high frequency plasma-enhanced chemical vapor deposition at a low substrate temperature
Miyajima, Shinsuke
Sawamura, Makoto
Yamada, Akira
Konagai, Makoto
Japanese Journal of Applied Physics, 2008, 47 (5 PART 1): : 3368 - 3371
[3] Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature
Miyajima, Shinsuke
Sawamura, Makoto
Yamada, Akira
Konagai, Makoto
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (05) : 3368 - 3371
[4] Hydrogenated amorphous silicon carbide thin films deposited by plasma-enhanced chemical vapor deposition
Yang, Shiguo
Wen, Guozhi
Luo, Yang
Liang, Yi
PROCEEDINGS OF THE 2015 4TH INTERNATIONAL CONFERENCE ON SUSTAINABLE ENERGY AND ENVIRONMENTAL ENGINEERING, 2016, 53 : 755 - 758
[5] Optical properties of nanocrystalline silicon films deposited by plasma-enhanced chemical vapor deposition
Ali, Atif Mossad
OPTICAL MATERIALS, 2007, 30 (02) : 238 - 243
[6] The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition
Kim, HY
Lee, KY
Lee, JY
THIN SOLID FILMS, 1997, 302 (1-2) : 17 - 24
[7] Influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition
Korea Advanced Inst of Science and, Technology, Taejon, Korea, Republic of
Thin Solid Films, 1-2 (17-24):
[8] High-rate deposition of high-quality hydrogenated amorphous silicon germanium using very high-frequency plasma-enhanced chemical vapor deposition with a high hydrogen dilution
Shima, M
Isomura, M
Wakisaka, K
Murata, K
Tanaka, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (12): : 7198 - 7204
[9] Structural and optical properties of nanocrystalline silicon films deposited by plasma-enhanced chemical vapor deposition
Ali, AM
Inokuma, T
Kurata, Y
Hasegawa, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (01): : 169 - 175
[10] Effect of hydrogen dilution on the growth of nanocrystalline silicon films at high temperature by using plasma-enhanced chemical vapor deposition
Ali, AM
Hasegawa, S
THIN SOLID FILMS, 2003, 437 (1-2) : 68 - 73

← 1 2 3 4 5 →