Study on co-electrodeposited tri-compound AlxGa1-xAs films

被引:0
|
作者
机构
[1] Yang, Chunhui
[2] Ye, Shuichi
[3] Han, Aizhen
[4] Gao, Yuankai
来源
Yang, Chunhui | 2000年 / 21期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [41] Weak localization in AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures with electrostatically induced random antidot array
    Minkov, G. M.
    Sherstobitov, A. A.
    Germanenko, A. V.
    Rut, O. E.
    PHYSICAL REVIEW B, 2008, 78 (19)
  • [42] PHOTO-LUMINESCENCE STUDY OF ACCEPTORS IN ALXGA1-XAS
    SWAMINATHAN, V
    ZILKO, JL
    TSANG, WT
    WAGNER, WR
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5163 - 5168
  • [43] Study of PV characteristics of AlxGa1-xAs/GaAs photodiodes
    Kalinovskiy, V. S.
    Kontrosh, E. V.
    Gusev, G. A.
    Sumarokov, A. N.
    Klimko, G. V.
    Ivanov, S. V.
    Yuferev, V. S.
    Tabarov, T. S.
    Andreev, V. M.
    19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2018, 993
  • [45] Localization in random electron systems:: AlxGa1-xAs alloys and intentionally disordered GaAs/AlxGa1-xAs superlattices
    Pusep, Yu. A.
    Rodriguez, A.
    PHYSICAL REVIEW B, 2007, 75 (23):
  • [46] BE-ION IMPLANTATION IN ALXGA1-XAS
    YAMAHATA, S
    ADACHI, S
    ISHIBASHI, T
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2814 - 2819
  • [47] OPTICAL-PROPERTIES OF ALXGA1-XAS
    ASPNES, DE
    KELSO, SM
    LOGAN, RA
    BHAT, R
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 754 - 767
  • [48] LUMINESCENCE IN INDIRECT BANDGAP ALXGA1-XAS
    KRESSEL, H
    NICOLL, FH
    HAWRYLO, FZ
    LOCKWOOD, HF
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4692 - &
  • [49] ELECTRON-MOBILITY IN ALXGA1-XAS
    NEUMANN, H
    FLOHRER, U
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (02): : K145 - K147
  • [50] LUMINESCENCE OF ALXGA1-XAS GROWN BY MOVPE
    ANDRE, JP
    BOULOU, M
    MICREAROUSSEL, A
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 192 - 197