Optically abrupt localized surface plasmon resonances in Si nanowires by mitigation of carrier density gradients

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School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta [1 ]
GA
30332, United States
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ACS Nano | / 2卷 / 1250-1256期
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Engineering Village;
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摘要：
Carrier density gradients - Discrete dipole approximation - Doping profiles - Localized surface plasmon resonance - Nanoscale semiconductors - Residual carrier density - Semiconductor nanowire - Vapor-liquid-solid techniques
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