Study of omni directional reflector in AlGaInP light emitting diodes

被引：0
|
作者：
Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China [1 ]
机构：
来源：
Guti Dianzixue Yanjiu Yu Jinzhan | 2008年 / 4卷 / 537-539期
关键词：
Light emitting diodes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：537 / 539
相关论文
共 50 条
  • [41] Sixty thousand hour light output reliability of AlGaInP light emitting diodes
    Grillot, Patrick N.
    Krames, Michael R.
    Zhao, Hanmin
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (04) : 564 - 574
  • [42] The study of novel high brightness 620nm AlGaInP light emitting diodes
    Guo, X
    Wang, GH
    Zhu, WJ
    Du, JY
    Gao, G
    Zou, DS
    Shen, GD
    Ma, XY
    Chen, LH
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1252 - 1254
  • [43] AlGaInP-sapphire glue bonded light-emitting diodes
    Chang, SJ
    Su, YK
    Yang, T
    Chang, CS
    Chen, TP
    Huang, KH
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (10) : 1390 - 1394
  • [44] Improved AlGaInP vertical emitting light-emitting diodes using direct printing
    Cho, Joong-Yeon
    Byeon, Kyeong-Jae
    Kim, Jin-Seung
    Lee, Heon
    OPTICS LETTERS, 2013, 38 (09) : 1573 - 1575
  • [45] HIGH-PERFORMANCE ALGAINP VISIBLE LIGHT-EMITTING-DIODES
    KUO, CP
    FLETCHER, RM
    OSENTOWSKI, TD
    LARDIZABAL, MC
    CRAFORD, MG
    ROBBINS, VM
    APPLIED PHYSICS LETTERS, 1990, 57 (27) : 2937 - 2939
  • [46] Theoretical and experimental analysis of current spreading in AlGaInP light emitting diodes
    Perks, R.M.
    Porch, A.
    Morgan, D.V.
    Kettle, J.
    Journal of Applied Physics, 2006, 100 (08):
  • [47] Manufacture of AlGaInP visible light-emitting diodes by MOCVD & VPE
    Zeng, QK
    Zeng, XF
    Liao, CJ
    Liu, SH
    SOLID-STATE ELECTRONICS, 1998, 42 (06) : 993 - 995
  • [48] Electron Irradiation Degradation of AlGaInP/GaAs Light-Emitting Diodes
    Brudnyi, Valentin
    Prudaev, Ilya
    Oleinik, Vladimir
    Marmaluk, Alexander
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (08):
  • [49] Graded Heterojunction of AlGaInP High-brightness Light Emitting Diodes
    LIU Lu~1
    2.Lab.of Photo-electron.Mater.and Technol.
    3.Quantum and Electron Institute
    SemiconductorPhotonicsandTechnology, 2004, (02) : 86 - 92
  • [50] Reliability of AlGaInP light emitting diodes with an ITO current spreading layer
    Gao Wei
    Guo Weiling
    Zhu Yanxu
    Jiang Wenjing
    Shen Guangdi
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (06)
12345