Development of a new design simulator for poly-Si TFTs to optimize the lightly doped drain structure

被引：0
|
作者：
Nanno, Yutaka [1 ]
Senda, Kohji [1 ]
Tsutsu, Hiroshi [1 ]
Uchiike, Heiju [1 ]
机构：
[1] Matsushita Elec. Industrial Co., Ltd, Display Devices Development Center, 3-1-1 Yagumo-Nakamachi, Moriguichi, Osaka 570-8501, Japan
来源：
Journal of the Society for Information Display | 2002年 / 10卷 / 01期
关键词：
Density of state - Lightly doped drain structure - Photo induced current - Photomask aligned process;
D O I：
10.1889/1.1827831
中图分类号：
学科分类号：
摘要：
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页码：101 / 106
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