Fabrication and properties of the novel HfSiON high-k gate dielectrics films

HfSiON thin films were prepared on p-type Si substrates by using reactive radio-frequency sputtering deposition. Composition, structure and dielectric properties of the new high-k gate dielectric HfSiON films were investigated. XRD analyses show that the films are amorphous even after annealed at 900 °. The capacitance-voltage (C-V) curves of MOS capacitor present that the dielectric constant k of the films is about 18.9 and the capacitance equivalent oxide thickness is 4.5 nm. I-V characteristic exhibits that the low leakage current of 2.510-7 A/cm2 and 4.910-7 A/cm2 at Vg=+1.5 V and -1.5 V, respectively. The analyses results show that HfSiON films will be a promising candidate for SiO2 gate dielectric.