Growth and optical characteristics of 408 nm InGaN/GaN MQW LED

被引：0
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作者：
Wang, Xiaohua [1 ]
Zhan, Wang [1 ]
Liu, Guojun [1 ]
机构：
[1] State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / 01期
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摘要：
6
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页码：104 / 107
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