In-memory Wallace Tree Multipliers Based on Majority Gates with Voltage Gated Spin-Orbit Torque Magnetoresistive Random Access Memory Devices

被引：0
|
作者：
Hui, Yajuan [1 ,2 ,3 ]
Li, Qingzhen [1 ,2 ,3 ]
Wang, Leimin [1 ,2 ,3 ]
Liu, Cheng [4 ]
机构：
[1] Institute of Automation, China University of Geoscience (Wuhan), Wuhan,430074, China
[2] Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan,430074, China
[3] Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan,430074, China
[4] Institute of Computing Technology, Chinese Academy of Sciences, Beijing,100080, China
来源：
Dianzi Yu Xinxi Xuebao/Journal of Electronics and Information Technology | 2024年 / 46卷 / 06期
关键词：
27;
D O I：
10.11999/JEIT230815
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2673 / 2680
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