Effects of rapid thermal annealing after plasma H2 pretreatment of the copper seed layer surface on copper electroplating

被引：0
|
作者：
Oh, J. [1 ]
Lee, H. [1 ]
Paul, A. [1 ]
Lee, C. [1 ]
机构：
[1] Dept. of Materials Science and Eng., Inha University, Inchon 402-751, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 9 A期
关键词：
Copper electroplating - High electromigration resistance - Plasma pretreatment - Seed layer;
D O I：
10.1143/jjap.40.5294
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：5294 / 5299
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