Synthesis of GaN quantum dots by ion implantation in dielectrics

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作者：
Borsella, E.
Garcia, M.A.
Mattei, G.
Maurizio, C.
Mazzoldi, P.
Cattaruzza, E.
Gonella, F.
Battaglin, G.
Quaranta, A.
D'Acapito, F.
机构：
[1] INFM, Dipartimento di Fisica, Università di Padova, via Marzolo 8, 35131 Padova, Italy
[2] INFM, Dipartimento di Chimica Fisica, Università di Venezia, Dorsoduro 2137, 30123 Venezia, Italy
[3] INFM, Dipto. di Ingegneria dei Materiali, Università di Trento, Via Mesiano 77, 38050 Povo, Trento, Italy
[4] INFM-OGG, Europ. Synchrt. Radiation Facility, B.P. 220, 38043 Grenoble, France
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| 1600年 / American Institute of Physics Inc.卷 / 90期
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