Influence of the annealing temperature on Ge1Sb2Te4 thin film prepared by pulsed laser deposition

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[1] Jigau, M.
[2] Osiac, M.
[3] Iacobescu, G.E.
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Osiac, M. (m_osiac@yahoo.com) | 1600年 / National Institute of Optoelectronics卷 / 19期
关键词：
537.1 Heat Treatment Processes - 741.3 Optical Devices and Systems - 744.1 Lasers; General - 744.9 Laser Applications - 951 Materials Science;
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28
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页码：5 / 6
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