30-nm-Gate AlGaN/GaN heterostructure field-effect transistors with a current-gain cutoff frequency of 181 GHz

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作者：
Higashiwaki, Masataka [1 ]
Mimura, Takashi [1 ,2 ]
Matsui, Toshiaki [1 ]
机构：
[1] National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
[2] Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2006年 / 45卷 / 42-45期
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