A high-resolution photoemission study of hydrogen-terminated 6H-SiC surfaces

被引:0
|
作者
Sieber, N. [1 ]
Seyller, Th. [1 ]
Ley, L. [1 ]
Polcik, M. [2 ]
James, D. [3 ]
Riley, J.D. [3 ]
Leckey, R.C.G. [3 ]
机构
[1] Institute of Technical Physics, University of Erlangen-Nürnberg, Erwin-Rommel-Str. 1, DE-91058 Erlangen, Germany
[2] Fritz-Haber-Institute, Faradayweg 4-6, DE-14195 Berlin, Germany
[3] Department of Physics, La Trobe University, Bundoora, Vic. 3083, Australia
关键词
Core level - Hydrogen termination - Mott hubbard transition;
D O I
10.4028/www.scientific.net/msf.389-393.713
中图分类号
学科分类号
摘要
引用
收藏
页码:713 / 716
相关论文
共 50 条
  • [21] Reconstruction of cleaved 6H-SiC surfaces
    Starke, U
    Tallarida, M
    Kumar, A
    Horn, K
    Seifarth, O
    Kipp, L
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 391 - 394
  • [22] Photoemission study of 6H-SiC(0001) surface with deposited Mn atoms
    Orlowski, B. A.
    Pietrzyk, M. A.
    Osinniy, V.
    Szot, M.
    Lusakowska, E.
    Grasza, K.
    Johnson, R. L.
    RADIATION PHYSICS AND CHEMISTRY, 2009, 78 : S25 - S28
  • [23] Electronic structure of hydrogen-terminated silicon surfaces [H-Si(111)] studied by two-photon photoemission
    Nakamura, Tsuneyuki
    Miyajima, Ken
    Hirata, Naoyuki
    Matsumoto, Takeshi
    Morikawa, Yoshitada
    Tada, Hirokazu
    Nakajima, Atsushi
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 98 (04): : 735 - 743
  • [24] Functionalization of 6H-SiC surfaces with organosilanes
    Schoell, S. J.
    Hoeb, M.
    Sharp, I. D.
    Steins, W.
    Eickhoff, M.
    Stutzmann, M.
    Brandt, M. S.
    APPLIED PHYSICS LETTERS, 2008, 92 (15)
  • [25] Interaction of nitrogen with 6H-SiC surfaces
    Van Elsbergen, V
    Rohleder, M
    Monch, W
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 457 - 462
  • [26] Step formation on hydrogen-etched 6H-SiC{0001} surfaces
    Nie, S.
    Lee, C. D.
    Feenstra, R. M.
    Ke, Y.
    Devaty, R. P.
    Choyke, W. J.
    Inoki, C. K.
    Kuan, T. S.
    Gu, Gong
    SURFACE SCIENCE, 2008, 602 (17) : 2936 - 2942
  • [27] Hydrogen desorption kinetics and band bending for 6H-SiC(0001) surfaces
    King, S. W.
    Davis, R. F.
    Nemanich, R. J.
    SURFACE SCIENCE, 2009, 603 (20) : 3104 - 3118
  • [28] Hydrogen desorption from 6H-SiC(0001) surfaces during graphitization
    Aoki, Yuki
    Hirayama, Hiroyuki
    APPLIED PHYSICS LETTERS, 2009, 95 (09)
  • [29] Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination
    Sieber, N
    Mantel, BF
    Seyller, T
    Ristein, J
    Ley, L
    Heller, T
    Batchelor, DR
    Schmeisser, D
    APPLIED PHYSICS LETTERS, 2001, 78 (09) : 1216 - 1218
  • [30] Electronic structure of hydrogen-terminated silicon surfaces [H-Si(111)] studied by two-photon photoemission
    Tsuneyuki Nakamura
    Ken Miyajima
    Naoyuki Hirata
    Takeshi Matsumoto
    Yoshitada Morikawa
    Hirokazu Tada
    Atsushi Nakajima
    Applied Physics A, 2010, 98 : 735 - 743