Impact of surface hydrophilicization prior to atomic layer deposition for HfO2/Si direct-contact gate stacks

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MIRAI-Advanced Semiconductor Research Center , National Institute of Advanced Industrial Science and Technology , Tsukuba, Ibaraki 305-8569, Japan [1 ]
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Appl. Phys. Express | 1882年 / 1卷 / 0112011-0112013期
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Compilation and indexing terms; Copyright 2024 Elsevier Inc;
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摘要：
Logic gates - Hafnium oxides
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