Contactless mapping of lifetime and diffusion length scan map of minority carriers in silicon wafers

被引：0
|
作者：
Palais, O. [1 ]
Gervais, J. [1 ]
Yakimov, E. [1 ]
Martinuzzi, S. [1 ]
机构：
[1] Lab. de Photoelectricite LPDSO, Université de Marseilles, 13397 Marseille Cedex 20, France
来源：
EPJ Applied Physics | 2000年 / 10卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
20
引用
收藏
页码：157 / 162
相关论文
共 50 条
  • [41] Contactless measurement of bulk recombination lifetime and surface recombination velocity in silicon wafers
    Bernini, R.
    Cutolo, A.
    Irace, A.
    Schettino, S.
    Spirito, P.
    Zeni, L.
    1995,
  • [42] AN RF BRIDGE TECHNIQUE FOR CONTACTLESS MEASUREMENT OF THE CARRIER LIFETIME IN SILICON-WAFERS
    TIEDJE, T
    HABERMAN, JI
    FRANCIS, RW
    GHOSH, AK
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2499 - 2503
  • [43] A noncontact electron-probe method for measuring the diffusion length and the lifetime of minority charge carriers in semiconductors
    Rau, ÉI
    Zhu, SQ
    SEMICONDUCTORS, 2001, 35 (06) : 718 - 722
  • [44] Minority lifetime degradation of silicon wafers after electric zone melting
    Wu, M. C.
    Yang, C. F.
    Lan, C. W.
    JOURNAL OF CRYSTAL GROWTH, 2015, 420 : 74 - 79
  • [45] SPECTROMETRICAL MEASUREMENT OF DIFFUSION LENGTH OF MINORITY-CARRIERS
    GLADYSHCHUK, AA
    KOSAREV, VM
    KOSTKO, VS
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1978, (07): : 132 - 133
  • [46] Effect of Iron Chloride Solutions on Charge Carriers' Lifetime in Silicon Wafers
    Manilov, A., I
    Litvinenko, S., V
    Skryshevsky, V. A.
    Alekseev, S. A.
    2019 IEEE 2ND UKRAINE CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (UKRCON-2019), 2019, : 739 - 742
  • [47] Lifetime mapping technique for ultrathin silicon-on-insulator wafers
    Sumie, S
    Ojima, F
    Yamashita, K
    Iba, K
    Hashizume, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (01) : G99 - G106
  • [48] MINORITY-CARRIER DIFFUSION LENGTH MAPPING OF EXTENDED CRYSTALLOGRAPHIC DEFECTS IN SEMICONDUCTOR SILICON
    STEMMER, M
    MARTINUZZI, S
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, (135): : 239 - 242
  • [49] INVESTIGATIONS ON DIFFUSION OF MINORITY CARRIERS FROM A POINT ON SILICON
    CHAMPNESS, C
    CANADIAN JOURNAL OF PHYSICS, 1961, 39 (05) : 754 - &
  • [50] THE DIFFUSION LENGTH OF CHARGE CARRIERS IN SILICON PHOTOCELLS
    VAVILOV, VS
    SMIRNOV, LS
    PATSKEVICH, VM
    SOVIET PHYSICS-SOLID STATE, 1960, 1 (09): : 1344 - 1345
12345