Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

被引:0
|
作者
机构
[1] Magnfält, D.
[2] 2,Fillon, A.
[3] Boyd, R.D.
[4] Helmersson, U.
[5] Sarakinos, K.
[6] Abadias, G.
来源
Magnfält, D. (danma@ifm.liu.se) | 1600年 / American Institute of Physics Inc.卷 / 119期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] ON THE INTRINSIC STRESS IN THIN CHROMIUM FILMS
    JANDA, M
    THIN SOLID FILMS, 1986, 142 (01) : 37 - 45
  • [32] Intrinsic stress of epitaxial thin films
    Koch, R.
    Winau, D.
    Rieder, K.H.
    Physica Scripta T, 1993, T49B : 539 - 543
  • [33] Clamping effect by the substrate on the intrinsic stress in polycrystalline films
    Gonzalez-Gonzalez, A.
    Polop, C.
    Vasco, E.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (02)
  • [34] Effect of grain shape on the agglomeration of polycrystalline thin films
    Bouville, Mathieu
    APPLIED PHYSICS LETTERS, 2007, 90 (06)
  • [35] Grain boundary interdiffusion and stresses in thin polycrystalline films
    L. Klinger
    E. Rabkin
    Journal of Materials Science, 2011, 46 : 4343 - 4348
  • [36] Deposition of polycrystalline thin films with controlled grain size
    Vopsaroiu, M
    Fernandez, GV
    Thwaites, MJ
    Anguita, J
    Grundy, PJ
    O'Grady, K
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (03) : 490 - 496
  • [37] Grain boundary interdiffusion and stresses in thin polycrystalline films
    Klinger, L.
    Rabkin, E.
    JOURNAL OF MATERIALS SCIENCE, 2011, 46 (12) : 4343 - 4348
  • [38] Dependence of thin film transistor characteristics on low-angle grain boundaries of (100)-oriented polycrystalline silicon thin films
    Thi Thuy Nguyen
    Kuroki, Shin-Ichiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SB)
  • [39] Thin film compressive stresses due to adatom insertion into grain boundaries
    Pao, Chun-Wei
    Foiles, Stephen M.
    Webb, Edmund B., III
    Srolovitz, David J.
    Floro, Jerrold A.
    PHYSICAL REVIEW LETTERS, 2007, 99 (03)
  • [40] Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy
    Titova, Lyubov V.
    Cocker, Tyler L.
    Xu, Sijia
    Baribeau, Jean-Marc
    Wu, Xiaohua
    Lockwood, David J.
    Hegmann, Frank A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (10)