Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers

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机构：
[1] Saito, H.
[2] Hayashi, S.
[3] Kusano, Y.
[4] Itoh, K.M.
[5] Vlasenko, M.P.
[6] Vlasenko, L.S.
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| 1600年 / American Institute of Physics Inc.卷 / 123期
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日本学术振兴会;
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摘要：
Electron spin resonance (ESR) spectra of surface and interface recombination centers recently observed on (001) silicon wafers, labeled Pm and KU1, were studied using spin dependent microwave photoconductivity. Both ESR spectra, having the orthorhombic symmetry and spins S = 1/2 and S = 1 for Pm and KU1, respectively, were observed in the commercially available surface oxidized (001)-Si wafers. Systematic studies on annealing and oxidation conditions for the Pm and KU1 formation conclude that both ESR spectra arise from the same center that contains the interaction between the two nearest Si dangling bonds on the (001) Si surface. © 2018 Author(s).
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