Novel embedded BeNOR flash memory

被引：0
|
作者：
Inst. of Microelectron., Tsinghua Univ., Beijing 100084, China [1 ]
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 08期
关键词：
Current voltage characteristics - Operations research;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A BeNOR Flash memory, which can work with byte erasing mode or sector erasing mode according to the difference of embedded memory systems, is proposed. This structure uses channel hot-electron to write and split-voltage negative gate source F-N tunneling effect to erase, and has a good disturb immunity when erased with 5 V source voltage. The BeNOR flash memory, which features a high program speed, a rapid read speed, and a good reliability, is demonstrated suitable for the embedded SOC systems under 1 Mbit.
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页码：855 / 860
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