The influence of recombination mechanisms on the dark current-voltage characteristics of the HgCdTe photodiodes

被引：0
|
作者：
Iakovleva, N.I. [1 ]
机构：
[1] Orion RandP Association, Inc., 9 Kosinskaya str., Moscow,111538, Russia
来源：
Applied Physics | 2015年 / 2015-January卷 / 05期
关键词：
Compendex;
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学科分类号：
摘要：
Dark currents
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页码：59 / 70
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