Carbonization layer obtained by acetylene reaction with silicon (100) and (111) surface using low pressure chemical vapor deposition

被引：1
|
作者：
Hashim, A.M. [1 ]
Yasui, K. [2 ]
机构：
[1] Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
[2] Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
来源：
Journal of Applied Sciences | 2008年 / 8卷 / 19期
关键词：
D O I：
10.3923/jas.2008.3473.3478
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：3473 / 3478
相关论文
共 50 条
  • [21] Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition
    Olubuyide, Oluwamuyiwa O.
    Danielson, David T.
    Kimerling, Lionel C.
    Hoyt, Judy L.
    THIN SOLID FILMS, 2006, 508 (1-2) : 14 - 19
  • [22] OPTICAL AND STRUCTURAL-PROPERTIES OF AMORPHOUS-SILICON OBTAINED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    AMATO, G
    FIZZOTTI, F
    MANFREDOTTI, C
    MENNA, P
    NOBILE, G
    SPAGNOLO, R
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1992, 170 (01): : 119 - 128
  • [23] Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane
    Nakazawa, Hideki
    Suzuki, Daiki
    Narita, Tsugitada
    Meguro, Kazuki
    Tsuchiya, Masato
    JOURNAL OF CRYSTAL GROWTH, 2015, 418 : 52 - 56
  • [24] SURFACE PROCESSES IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    HOTTIER, F
    CADORET, R
    JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 199 - 206
  • [25] Control of the nucleation and quality of graphene grown by low-pressure chemical vapor deposition with acetylene
    Yang, Meng
    Sasaki, Shinichirou
    Suzuki, Ken
    Miura, Hideo
    APPLIED SURFACE SCIENCE, 2016, 366 : 219 - 226
  • [26] SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates
    Yan, F
    Zheng, YD
    Chen, P
    Sun, L
    Gu, SL
    OPTICAL MATERIALS, 2003, 23 (1-2) : 113 - 116
  • [27] Effect of the Low-Pressure Chemical Vapor Deposition Time on the Silicon Morphology
    Choi, Kwang Nam
    Chung, Kwan Soo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (02) : 703 - 706
  • [28] Silicon/graphite nanocomposite electrodes prepared by low pressure chemical vapor deposition
    Alias, Melanie
    Crosnier, Olivier
    Sandu, Izabela
    Jestin, Gwenole
    Papadimopoulos, Alexandre
    Le Cras, Frederic
    Schleich, Donald M.
    Brousse, Thierry
    JOURNAL OF POWER SOURCES, 2007, 174 (02) : 900 - 904
  • [29] Heteroepitaxial growth of SiC on Si(100) and (111) by chemical vapor deposition using trimethylsilane
    Madapura, S
    Steckl, AJ
    Loboda, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (03) : 1197 - 1202
  • [30] Deposition mechanism of silicon nitride in direct photoassisted chemical vapor deposition using a low-pressure Hg lamp
    Kyoto Univ, Kyoto, Japan
    J Electrochem Soc, 6 (1976-1982):
12345