Carbonization layer obtained by acetylene reaction with silicon (100) and (111) surface using low pressure chemical vapor deposition

被引：1
|
作者：
Hashim, A.M. [1 ]
Yasui, K. [2 ]
机构：
[1] Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
[2] Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
来源：
Journal of Applied Sciences | 2008年 / 8卷 / 19期
关键词：
D O I：
10.3923/jas.2008.3473.3478
中图分类号：
学科分类号：
摘要：
引用
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页码：3473 / 3478
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