Effects of random ferroelectric and dielectric phase distributions on junctionless ferroelectric field effect transistors

被引：0
|
作者：
Huo, Honglei [1 ]
Lü, Weifeng [1 ]
Wang, Yubin [1 ]
Zhao, Shuaiwei [1 ]
Zheng, Xinfeng [1 ]
机构：
[1] School of Microelectronics, Hangzhou Dianzi University, Zhejiang, Hangzhou,310018, China
来源：
Micro and Nanostructures | 2024年 / 196卷
关键词：
41;
D O I：
10.1016/j.micrna.2024.207997
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Physics of organic ferroelectric field-effect transistors
    Brondijk, Jakob J.
    Asadi, Kamal
    Blom, Paul W. M.
    de Leeuw, Dago M.
    JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 2012, 50 (01) : 47 - 54
  • [22] MEMORY MODES OF FERROELECTRIC FIELD-EFFECT TRANSISTORS
    ITO, K
    TSUCHIYA, H
    SOLID-STATE ELECTRONICS, 1977, 20 (06) : 529 - 537
  • [23] Graphene Field-Effect Transistors with Ferroelectric Gating
    Zheng, Yi
    Ni, Guang-Xin
    Toh, Chee-Tat
    Tan, Chin-Yaw
    Yao, Kui
    Oezyilmaz, Barbaros
    PHYSICAL REVIEW LETTERS, 2010, 105 (16)
  • [24] Phase transformations and dielectric response in ferroelectric superlattices ferroelectric-dielectric
    Darinskii, B. M.
    Sidorkin, A. S.
    Sigov, A. S.
    FERROELECTRICS, 2022, 590 (01) : 200 - 205
  • [25] Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors
    Toprasertpong, Kasidit
    Tahara, Kento
    Takenaka, Mitsuru
    Takagi, Shinichi
    APPLIED PHYSICS LETTERS, 2020, 116 (24)
  • [26] Development of low dielectric constant ferroelectric materials for the ferroelectric memory field effect transistor
    ROHM Co, Ltd, Kyoto, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 9 B (5935-5938):
  • [27] Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors
    Fu Zong-Yuan
    Zhang Jian-Chi
    Hu Jing-Hang
    Jiang Yu-Long
    Ding Shi-Jin
    Zhu Guo-Dong
    CHINESE PHYSICS B, 2015, 24 (05)
  • [28] Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator
    Hattori, Junichi
    Fukuda, Koichi
    Ikegami, Tsutomu
    Ota, Hiroyuki
    Migita, Shinji
    Asai, Hidehiro
    Toriumi, Akira
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [29] Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution
    Liu, You-Sheng
    Su, Pin
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (03) : 369 - 372
  • [30] Development of low dielectric constant ferroelectric materials for the ferroelectric memory field effect transistor
    Fujimori, Y
    Izumi, N
    Nakamura, T
    Kamisawa, A
    Shigematsu, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B): : 5935 - 5938
12345