Band offsets and electronic structures of interface between In0.5Ga0.5As and InP

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[1] [1,Cai, Genwang
[2] Wang, Changhong
[3] Wang, Weichao
[4] Liang, Erjun
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| 1600年 / American Institute of Physics Inc.卷 / 119期
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Indium phosphide;
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