Gas-source MBE growth of metamorphic InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP high-electron-mobility structures on GaAs substrates

被引：0

作者：

Ouchi, K ^{[1
]}

Mishima, T ^{[1
]}

Kudo, M ^{[1
]}

Ohta, H ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICIPRM.2001.929016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced metamorphic high-electron-mobility heterostructures were grown by gas-source molecular beam epitaxy (gas-source MBE). These structures consist of an InGaAs/InAsP composite channel layer to improve breakdown voltage and a thin InP stopper layer under the n-InGaAs contact layer to enable long-term reliability and highly selective etching for mass production. Even though the graded buffer layer was thin, 0.45 mum misfit dislocations, observed by transmission-electron microscopy (TEM), were confined effectively to this thin buffer layer. High mobilities of over 9000 cm(2)/Vs were obtained on the thin compositionally graded InAlAs buffer layer when the As composition of the InAsP sub-channel layer was less than 0.2.

引用

页码：51 / 54

页数：4

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