Optical constants and ellipsometric thickness determination of strained Si1-xGex=C layers on Si (100) and related heterostructures

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作者：
Zollner, Stefan
Hildreth, Jill
Liu, Ran
Zaumseil, P.
Weidner, M.
Tillack, B.
机构：
[1] Motorola Semiconduct. Prod. Sector, MD M360, 2200 West Broadway Road, Mesa, AZ 85202, United States
[2] Institute for Semiconductor Physics, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
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| 1600年 / American Institute of Physics Inc.卷 / 88期
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