Metal nanoparticle field-effect transistor

被引:0
|
作者
机构
[1] Cai, Yuxue
[2] Michels, Jan
[3] 2,Bachmann, Julien
[4] Klinke, Christian
来源
| 1600年 / American Institute of Physics Inc.卷 / 114期
关键词
All Open Access; Green;
D O I
暂无
中图分类号
学科分类号
摘要
50
引用
收藏
相关论文
共 50 条
  • [21] AMBIPOLAR FIELD-EFFECT TRANSISTOR
    PFLEIDERER, H
    KUSIAN, W
    SOLID-STATE ELECTRONICS, 1986, 29 (03) : 317 - 319
  • [22] Other transistor: Early history of the metal-oxide-semiconductor field-effect transistor
    Coll. of Engineering and Mathematics, University of Vermont, 109 Votey Building, Burlington, VT 05405-0156, United States
    Eng Sci Educ J, 5 (233-240):
  • [23] GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, MICROWAVE TRANSISTOR WITH LITTLE NOISE
    KNIEPKAMP, H
    SIEMENS ZEITSCHRIFT, 1976, 50 (11): : 736 - 741
  • [24] Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor
    Natori, K
    Kimura, Y
    Shimizu, T
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
  • [25] Large metal halide perovskite crystals for field-effect transistor applications
    Matsushima, Toshinori
    Leyden, Matthew R.
    Fujihara, Takashi
    Qin, Chuanjiang
    Sandanayaka, Atula S. D.
    Adachi, Chihaya
    APPLIED PHYSICS LETTERS, 2019, 115 (12)
  • [26] ANALYSIS OF A FIELD-EFFECT TRANSISTOR WITH A CHANNEL MADE OF ULTRAFINE METAL PARTICLES
    TAMURA, H
    HASUO, S
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 3036 - 3041
  • [27] Graphene field-effect transistor biosensors for detection of heavy metal ions
    Du, Junhui
    Cui, Chuanjin
    Chen, Hongshuo
    Liu, Haibin
    Zhang, Xuechao
    Zhang, Wensi
    JOURNAL OF FOOD MEASUREMENT AND CHARACTERIZATION, 2024, 18 (07) : 5683 - 5694
  • [28] Reliability of GaN metal semiconductor field-effect transistor at high temperature
    Yoshida, S
    Suzuki, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5A): : L482 - L483
  • [29] Direct integration of metal oxide nanowire in vertical field-effect transistor
    Nguyen, P
    Ng, HT
    Yamada, T
    Smith, MK
    Li, J
    Han, J
    Meyyappan, M
    NANO LETTERS, 2004, 4 (04) : 651 - 657
  • [30] A new field-effect transistor based on the metal-insulator transition
    Katayama, K
    Hisamoto, D
    Nakamura, Y
    Kobayashi, N
    Nagai, R
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) : 2542 - 2548